j309 / j310 / mmbfj309 / mmbfj3 10 ? n-channel rf amplifier ? 2010 fairchild semiconductor corporation www.fairchildsemi.com j309 / j310 / mmbfj309 / mmbfj310 rev. a1 1 december 2010 j309 / j310 / mmbfj309 / mmbfj310 n-channel rf amplifier features ? this device is designed for vhf/uhf amplifier, oscillator and mixer applications. ? as a common gate amplifier, 16 db at 100 mhz and 12 db at 450 mhz can be realized. ? sourced from process 92. ? source & drain are interchangeable. absolute maximum ratings * t a = 25 c unless otherwise noted * these ratings are limiting values above which the servic eability of any semiconductor device may be impaired. notes: 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limit s. the factory should be co nsulted on applications invo lving pulsed or low duty cycle operations. thermal characteristics t a = 25 c unless otherwise noted * device mounted on fr-4 pcb 1.6" x 1.6" x 0.06". symbol parameter value units v ds drain-source voltage 25 v v gs gate-source voltage -25 v i gf forward gate current 10 ma t j, t stg operating and storage junction temperature range - 55 to +150 c symbol parameter max. units j309-j310 *mmbfj309-310 p d total device dissipation derate above 25 c 625 5.0 350 2.8 mw mw/ c r jc thermal resistance, junction to case 127 c/w r ja thermal resistance, junction to ambient 357 556 c/w j309 mmbfj309 sot-23 mark mmbfj309 : 6u g d s j310 mmbfj310 mmbfj310 : 6t g s d to-92
j309 / j310 / mmbfj309 / mmbfj3 10 ? n-channel rf amplifier ? 2010 fairchild semiconductor corporation www.fairchildsemi.com j309 / j310 / mmbfj309 / mmbfj310 rev. a1 2 electrical characteristics t a = 25c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2.0% symbol parameter test condition min. typ. max. units off characteristics bv (br)gss gate-source breakdown voltage i g = -1.0 a, v ds = 0 -25 v i gss gate reverse current v gs = -15v, v ds = 0 v gs = -15v, v ds = 0, t a = 125c -1.0 -1.0 na a v gs(off) gate-source cutoff voltage v ds = 10v, i d = 1.0na 309 310 -1.0 -2.0 -4.0 -6.5 v v on characteristics i dss zero-gate voltage drain current* v ds = 10v, v gs = 0 309 310 12 24 30 60 ma ma v gs(f) gate-source forward voltage v ds = 0, i g = 1.0ma 1.0 v small signal characteristics re (yis) common-source input conductance v ds = 10v, i d = 10ma, f = 100mhz 309 310 0.7 0.5 mmhos mmhos re (yos) common-source output conductance v ds = 10v, i d = 10ma, f = 100mhz 0.25 mmhos g pg common-gate power gain v ds = 10v, i d = 10ma, f = 100mhz 16 db re (yfs ) common-source forward transconductance v ds = 10v, i d = 10ma, f = 100mhz 12 mmhos re (yig) common-gate input conductance v ds = 10v, i d = 10ma, f = 100mhz 12 mmhos g fs common-source forward transconductance v ds = 10v, i d = 10ma, f = 1.0khz 309 310 10,000 8,000 20,000 18,000 mhos mhos g oss common-source output conductance v ds = 10v, i d = 10ma, f = 1.0khz 150 mhos g fg common-gate forward conductance v ds = 10v, i d = 10ma, f = 1.0khz 309 310 13,000 12,000 mhos mhos g og common-gate output conductance v ds = 10v, i d = 10ma, f = 1.0khz 309 310 100 150 mhos mhos c dg drain-gate capacitance v ds = 0, v gs = -10v, f = 1.0mhz 2.0 2.5 pf c sg source-gate capacitance v ds = 0, v gs = -10v, f = 1.0mhz 4.1 5.0 pf nf noise figure v ds = 10v, i d = 10ma, f = 450mhz 3.0 db e n equivalent short-circuit input noise voltage v ds = 10v, i d = 10ma, f = 100hz 6.0 nv/ hz
j309 / j310 / mmbfj309 / mmbfj3 10 ? n-channel rf amplifier ? 2010 fairchild semiconductor corporation www.fairchildsemi.com j309 / j310 / mmbfj309 / mmbfj310 rev. a1 3 typical performance characteristics transfer characteristics transfer characteristics transfer characteristics forward transadmittance transfer characteristics input admittance
j309 / j310 / mmbfj309 / mmbfj3 10 ? n-channel rf amplifier ? 2010 fairchild semiconductor corporation www.fairchildsemi.com j309 / j310 / mmbfj309 / mmbfj310 rev. a1 4 typical performance characteristics (continued) capacitance vs. voltage output admittance output conductance vs. drain current common drain-source noise voltage vs. frequency reverse transadmittance
j309 / j310 / mmbfj309 / mmbfj3 10 ? n-channel rf amplifier ? 2010 fairchild semiconductor corporation www.fairchildsemi.com j309 / j310 / mmbfj309 / mmbfj310 rev. a1 5 typical performance characteristics (continued) transconductance vs. drain current parameter interactions leakage current vs. voltage power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 temperature ( c) p - power dissipation (mw) d o to-92 sot-23
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